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Direct Analysis for Reactive Gases: Trace Metals Solved
Reliable Trace Metal Quantification in Reactive & Moisture-Sensitive Gases
Proprietary Methods and Apparatus (Patent US20240272122A1) for Direct Analysis, Ensuring Ultra-High Purity Compliance Where Traditional Impingers Fail.
Secure your semiconductor fabrication line by gaining robust, accurate, and direct measurement of trace metal contamination in critical process gases without the risk of hydrolysis or sample degradation.

The Purity Challenge
Sample Preparation Failure
High-stakes problems in semiconductor manufacturing that require unique solutions




The Technology
Dual Exchange for Robust Analysis
The mechanism that enables success in these difficult matrices
Patented Dual Gas Exchange Device
The core of the invention is a two-step system designed to handle both the reactive sample and the calibration reference safely:

Stage 1
Sample Exchange
The initial device facilitates the transfer of metal contaminants from the moisture-sensitive sample gas into a carrier solution without allowing the gas itself to contact the solution's water content.

Stage 2
Sample Exchange
A second, connected gas exchange device is utilized to introduce moisture-free, controlled metal spikes from the calibrant solution, ensuring that the calibration process itself is not compromised by the reactive gas's presence or by external moisture.
Advanced Ionization & Detection
The system integrates a precision ionization source with an advanced detection device, ensuring accurate measurement of trace metal contaminants.
1
Light Source & Ionization
Controlled ionization of sample introduction for precise analysis
2
Sample Introduction Device
Integrated sample handling without moisture contamination
3
Detection Device
High-sensitivity detection for ppb-ppt level quantification

Patent diagram showing the integrated ionization and detection system configuration

Result
Direct & Interference-Free Analysis
This method achieves the required transfer efficiency and matrix se paration, enabling a robust analysis of the resulting solution via standard ICP-MS or ICP-OES techniques.
Analysis Method
ICP-MS / ICP-OES
Detection Level
ppb - ppt
The Purity Challenge
Ensuring Process Integrity
The primary focus is compliance and quality control in ultra-pure environments.

01
Semiconductor Process Gas Qualification
Benefit:
Provides the required ultra-trace metal certification (e.g., ppb or ppt levels) for all specialty gases entering the fab, including challenging hydrides and halides.

02
Chemical Manufacturing Quality Control
Benefit:
Enables direct, on-site quality control for manufacturers of high-purity chemicals, reducing reliance on slow and failure-prone external lab analysis.

03
Regulatory and Safety Compliance
Benefit:
Offers a standardized, validated method for monitoring potentially hazardous metal contaminants in reactive gases, improving worker safety and regulatory adherence.
Secure Your Purity Pipeline
The primary focus is compliance and quality control in ultra-pure environments.
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